標題: Suppressing the Initial Growth of Sidewall GaN by Modifying AlN-Coated Patterned Sapphire with KOH-Based Etchant
作者: Hsu, Wen-Yang
Lian, Yuan-Chi
Wu, Pei-Yu
Yong, Wei-Min
Sheu, Jinn-Kong
Lin, Kun-Lin
Wu, YewChung Sermon
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 29-Oct-2019
摘要: Micron-sized patterned sapphire substrates (PSSs) with an ex situ sputtered AlN nucleation layer (NL) have been used to improve the performance of GaN-based light-emitting diodes (LEDs). The growth of GaN was enhanced not only from bottom c-plane, but also from the sidewall of the micron-sized patterns. In this study, KOH solution was used to etch AlN (especially sidewall AlN) for the first time. The additional etching process is very simple. It was found that KOH etching 1 min did enhance the light output power (LOP) of LED. However, with the increase of etching time to 4 min, the LOP decreased. Besides, the effect of remained AlN on GaN growth mechanism was investigated in detail. (C) The Author(s) 2019. Published by ECS.
URI: http://dx.doi.org/10.1149/2.0182001JSS
http://hdl.handle.net/11536/153207
ISSN: 2162-8769
DOI: 10.1149/2.0182001JSS
期刊: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume: 9
Issue: 1
起始頁: 0
結束頁: 0
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