Structual Design of T-gate, Air-spacer Poly-Si TFTs for RF applications

Abstract

We employed Sentaurus TCAD simulation to explore the impacts of major structural parameters on the electrical characteristics of poly-Si TFTs with T-gate and air spacers. The effects and trade-off between the source/drain (S/D) junctions relative to T-gate are discussed with the aim to find insightful information for the design and fabrication of real devices. Influences of the gate geometry on the parasitic capacitances of the T-gate devices are also simulated.