標題: Tuning Stress in Cu Thin Films by Developing Highly (111)-Oriented Nanotwinned Structure
作者: Wang, I-Ju
Ku, Ching-Shun
Tu-Ngoc Lam
Huang, E-Wen
Tu, K. N.
Chen, Chih
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Residual stress;nanotwinned Cu;electroplating;synchrotron x-ray diffraction
公開日期: 1-Jan-1970
摘要: We have examined the effect of different bath temperatures on residual stress of both the random-oriented Cu films and the highly (111)-oriented nanotwinned Cu films by synchrotron radiation x-ray measurements. The bath temperature varied from 15 degrees C to 40 degrees C. The results indicate that the average residual stress in the highly (111)-oriented nanotwinned films is higher than that in the randomly oriented Cu films. However, the stress in the highly (111)-oriented Cu decreases with increasing bath temperature. The average residual stress can be reduced from 253 MPa electroplated at 15 degrees C to 95 MPa under a bath temperature of 35 degrees C. We could successfully tune and measure residual stress of the Cu thin films. The films with low residual stress prevent warpage from occurring on the substrate and lower the processing failure in copper direct bonding and other processes that need alignment.
URI: http://dx.doi.org/10.1007/s11664-019-07742-1
http://hdl.handle.net/11536/153420
ISSN: 0361-5235
DOI: 10.1007/s11664-019-07742-1
期刊: JOURNAL OF ELECTRONIC MATERIALS
起始頁: 0
結束頁: 0
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