標題: | Topological Transition in a 3nm Thick Al Film Grown by Molecular Beam Epitaxy |
作者: | Kumar, Ankit Su, Guan-Ming Chang, Chau-Shing Yeh, Ching-Chen Wu, Bi-Yi Patel, Dinesh K. Fan, Yen-Ting Lin, Sheng-Di Chow, Lee Liang, Chi-Te 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 27-十二月-2019 |
摘要: | We have performed detailed transport measurements on a 3nm thick (as-grown) Al film on GaAs prepared by molecular beam epitaxy (MBE). Such an epitaxial film grown on a GaAs substrate shows the Berezinskii-Kosterlitz-Thouless (BKT) transition, a topological transition in two dimensions. Our experimental data shows that the MBE-grown Al nanofilm is an ideal system for probing interesting physical phenomena such as the BKT transition and superconductivity. The increased superconductor transition temperature (similar to 2.4K) compared to that of bulk Al (1.2K), together with the ultrathin film quality, may be advantageous for future superconductor-based quantum devices and quantum information technology. |
URI: | http://dx.doi.org/10.1155/2019/6376529 http://hdl.handle.net/11536/153492 |
ISSN: | 1687-4110 |
DOI: | 10.1155/2019/6376529 |
期刊: | JOURNAL OF NANOMATERIALS |
Volume: | 2019 |
起始頁: | 0 |
結束頁: | 0 |
顯示於類別: | 期刊論文 |