標題: Topological Transition in a 3nm Thick Al Film Grown by Molecular Beam Epitaxy
作者: Kumar, Ankit
Su, Guan-Ming
Chang, Chau-Shing
Yeh, Ching-Chen
Wu, Bi-Yi
Patel, Dinesh K.
Fan, Yen-Ting
Lin, Sheng-Di
Chow, Lee
Liang, Chi-Te
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 27-Dec-2019
摘要: We have performed detailed transport measurements on a 3nm thick (as-grown) Al film on GaAs prepared by molecular beam epitaxy (MBE). Such an epitaxial film grown on a GaAs substrate shows the Berezinskii-Kosterlitz-Thouless (BKT) transition, a topological transition in two dimensions. Our experimental data shows that the MBE-grown Al nanofilm is an ideal system for probing interesting physical phenomena such as the BKT transition and superconductivity. The increased superconductor transition temperature (similar to 2.4K) compared to that of bulk Al (1.2K), together with the ultrathin film quality, may be advantageous for future superconductor-based quantum devices and quantum information technology.
URI: http://dx.doi.org/10.1155/2019/6376529
http://hdl.handle.net/11536/153492
ISSN: 1687-4110
DOI: 10.1155/2019/6376529
期刊: JOURNAL OF NANOMATERIALS
Volume: 2019
起始頁: 0
結束頁: 0
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