Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yang, Shih-Hsien | en_US |
dc.contributor.author | Lee, Ko-Chun | en_US |
dc.contributor.author | Tsai, Meng-Yu | en_US |
dc.contributor.author | Chang, Yuan-Ming | en_US |
dc.contributor.author | Lin, Che-Yi | en_US |
dc.contributor.author | Yang, Feng-Shou | en_US |
dc.contributor.author | Watanabe, Kenji | en_US |
dc.contributor.author | Taniguchi, Takashi | en_US |
dc.contributor.author | Lien, Chen-Hsin | en_US |
dc.contributor.author | Ho, Ching-Hwa | en_US |
dc.contributor.author | Li, Mengjiao | en_US |
dc.contributor.author | Lin, Yen-Fu | en_US |
dc.contributor.author | Lai, Ying-Chih | en_US |
dc.date.accessioned | 2020-02-02T23:54:39Z | - |
dc.date.available | 2020-02-02T23:54:39Z | - |
dc.date.issued | 2019-12-01 | en_US |
dc.identifier.issn | 2211-2855 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.nanoen.2019.104107 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/153598 | - |
dc.description.abstract | Multifunctional devices are expected to allow development of low-cost, highly integrated, and energy-efficient electronics for the internet of things (IoT) era. Here, we demonstrate an all-two-dimensional ReSe2/h-BN/graphene heterostructure (ReSe2 HS) consisting of a vertically coupled ReSe2 field-effect transistor and charge storage component, which possesses multifunctional characteristics for use in electronics and optoelectronics. As an electrically controlled non-volatile memory (NVM), the ReSe2 HS delivers high-performance multilevel data storage with a readout on/off current ratio exceeding 10(5) and excellent durability (> 10(4) s) at an ultralow V-ds of 50 mV, which benefits to the development of power saving devices. The ReSe2 HS design and high-photoresponsivity ReSe2 channel also achieve an energy efficient optical NVM with full-visible-spectrum distinction. Besides, the ReSe2 HS displays unique ambipolarity to operate as either an inverter or frequency doubler. We further propose a power-free ReSe2 HS optical memory matrix to simplify imaging systems. The ReSe2 HS shows promise for use in light-programmable information storage systems and neuromorphic computation with low power consumption. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Low-powered | en_US |
dc.subject | Van der Waals heterostructure | en_US |
dc.subject | ReSe2 | en_US |
dc.subject | Optoelectronic memory | en_US |
dc.subject | Charge storage | en_US |
dc.subject | Multi-functionality | en_US |
dc.title | Multifunctional full-visible-spectrum optoelectronics based on a van der Waals heterostructure | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.nanoen.2019.104107 | en_US |
dc.identifier.journal | NANO ENERGY | en_US |
dc.citation.volume | 66 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000503062400027 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Articles |