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dc.contributor.authorYang, Shih-Hsienen_US
dc.contributor.authorLee, Ko-Chunen_US
dc.contributor.authorTsai, Meng-Yuen_US
dc.contributor.authorChang, Yuan-Mingen_US
dc.contributor.authorLin, Che-Yien_US
dc.contributor.authorYang, Feng-Shouen_US
dc.contributor.authorWatanabe, Kenjien_US
dc.contributor.authorTaniguchi, Takashien_US
dc.contributor.authorLien, Chen-Hsinen_US
dc.contributor.authorHo, Ching-Hwaen_US
dc.contributor.authorLi, Mengjiaoen_US
dc.contributor.authorLin, Yen-Fuen_US
dc.contributor.authorLai, Ying-Chihen_US
dc.date.accessioned2020-02-02T23:54:39Z-
dc.date.available2020-02-02T23:54:39Z-
dc.date.issued2019-12-01en_US
dc.identifier.issn2211-2855en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.nanoen.2019.104107en_US
dc.identifier.urihttp://hdl.handle.net/11536/153598-
dc.description.abstractMultifunctional devices are expected to allow development of low-cost, highly integrated, and energy-efficient electronics for the internet of things (IoT) era. Here, we demonstrate an all-two-dimensional ReSe2/h-BN/graphene heterostructure (ReSe2 HS) consisting of a vertically coupled ReSe2 field-effect transistor and charge storage component, which possesses multifunctional characteristics for use in electronics and optoelectronics. As an electrically controlled non-volatile memory (NVM), the ReSe2 HS delivers high-performance multilevel data storage with a readout on/off current ratio exceeding 10(5) and excellent durability (> 10(4) s) at an ultralow V-ds of 50 mV, which benefits to the development of power saving devices. The ReSe2 HS design and high-photoresponsivity ReSe2 channel also achieve an energy efficient optical NVM with full-visible-spectrum distinction. Besides, the ReSe2 HS displays unique ambipolarity to operate as either an inverter or frequency doubler. We further propose a power-free ReSe2 HS optical memory matrix to simplify imaging systems. The ReSe2 HS shows promise for use in light-programmable information storage systems and neuromorphic computation with low power consumption.en_US
dc.language.isoen_USen_US
dc.subjectLow-powereden_US
dc.subjectVan der Waals heterostructureen_US
dc.subjectReSe2en_US
dc.subjectOptoelectronic memoryen_US
dc.subjectCharge storageen_US
dc.subjectMulti-functionalityen_US
dc.titleMultifunctional full-visible-spectrum optoelectronics based on a van der Waals heterostructureen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.nanoen.2019.104107en_US
dc.identifier.journalNANO ENERGYen_US
dc.citation.volume66en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000503062400027en_US
dc.citation.woscount0en_US
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