Impact of Multi-Domain Interaction on ON-State Characteristics of MFIS-Type 2D Negative-Capacitance FETs

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lu, Po-Sheng	en_US
dc.contributor.author	Lin, Chia-Chen	en_US
dc.contributor.author	Su, Pin	en_US
dc.date.accessioned	2020-02-02T23:55:33Z	-
dc.date.available	2020-02-02T23:55:33Z	-
dc.date.issued	2019-01-01	en_US
dc.identifier.isbn	978-1-7281-0942-8	en_US
dc.identifier.issn	1930-8868	en_US
dc.identifier.uri	http://hdl.handle.net/11536/153663	-
dc.description.abstract	In this work, with the aid of segmented SPICE simulation, we investigate the impact of multi-domain interaction on MFIS-type 2D Negative-Capacitance FETs with emphasis on the ON-state characteristics. Our study indicates that the multi-domain interaction enhances the lateral electric field for the MFIS device, leading to a higher ON-current. In addition, the multi-domain interaction increases the saturation drain voltage of the MFIS device due to the rise of the internal voltage near the drain-side. Our study also suggests that the negative differential resistance (NDR) effect present in MFIS devices may result from the strong domain interaction in addition to negative DIBL.	en_US
dc.language.iso	en_US	en_US
dc.title	Impact of Multi-Domain Interaction on ON-State Characteristics of MFIS-Type 2D Negative-Capacitance FETs	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2019 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)	en_US
dc.citation.spage	0	en_US
dc.citation.epage	0	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000503374900001	en_US
dc.citation.woscount	0	en_US
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