Hot-Carrier Injection-Induced Disturb and Improvement Methods in 3D NAND Flash Memory

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DC 欄位	值	語言
dc.contributor.author	Lin, Wei-Liang	en_US
dc.contributor.author	Tsai, Wen-Jer	en_US
dc.contributor.author	Cheng, C. C.	en_US
dc.contributor.author	Lu, Chun-Chang	en_US
dc.contributor.author	Ku, S. H.	en_US
dc.contributor.author	Chang, Y. W.	en_US
dc.contributor.author	Wu, Guan-Wei	en_US
dc.contributor.author	Liu, Lenvis	en_US
dc.contributor.author	Hwang, S. W.	en_US
dc.contributor.author	Lu, Tao-Cheng	en_US
dc.contributor.author	Chen, Kuang-Chao	en_US
dc.contributor.author	Tseng, Tseung-Yuen	en_US
dc.contributor.author	Lu, Chih-Yuan	en_US
dc.date.accessioned	2020-02-02T23:55:33Z	-
dc.date.available	2020-02-02T23:55:33Z	-
dc.date.issued	2019-01-01	en_US
dc.identifier.isbn	978-1-7281-0942-8	en_US
dc.identifier.issn	1930-8868	en_US
dc.identifier.uri	http://hdl.handle.net/11536/153665	-
dc.description.abstract	We investigate a hot-carrier injection- induced program disturb in a 3D NAND flash memory. As there exist specific coding patterns, a "down-coupling" region and a "pre-charge" regions are formed during program-verify and the following program phases, respectively, in the inhibit cell strings. A high heating field is built nearby the PGM wordline. Hot carriers may inject into the inhibit cells as Vpgm is applied. Soft ramp-down and pre-turn-on schemes are proposed to mitigate this disturb.	en_US
dc.language.iso	en_US	en_US
dc.title	Hot-Carrier Injection-Induced Disturb and Improvement Methods in 3D NAND Flash Memory	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2019 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)	en_US
dc.citation.spage	0	en_US
dc.citation.epage	0	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000503374900012	en_US
dc.citation.woscount	0	en_US
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