標題: Evaluation of 2D Negative-Capacitance FETs for Low-Voltage SRAM Applications
作者: Tseng, Kuei-Yang
You, Wei-Xiang
Su, Pin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-一月-2019
摘要: In this work, we comprehensively evaluate and analyze the stability and performance of 6T SRAM cells using 2D MFIS-type negative capacitance FETs (2D-NCFETs) based on the IRDS 2030 node with 10-nm gate length. Our results indicate that 2D-NCFETs possess better RSNM than the 2D-FET counterpart under low supply voltages. Our study also shows that 2D-NCFETs have better WSNM except for V-DD = 0.2V due to the existence of hysteresis loop in write curve during write operation. By using write-assist circuits or back-gating techniques, we demonstrate that the WSNM of 2D-NCFETs can be significantly improved. We further analyze the performance of read and write operations, and 2D-NCFETs have been found to possess better performance than 2D-FETs.
URI: http://hdl.handle.net/11536/153669
ISBN: 978-1-7281-0942-8
ISSN: 1930-8868
期刊: 2019 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)
起始頁: 0
結束頁: 0
顯示於類別:會議論文