標題: Evaluating nanotribological behavior of annealing Si(0.8)Ge(0.2)/Si films
作者: Wu, Ming-Jhang
Wen, Hua-Chiang
Wu, Shyh-Chi
Yang, Ping-Feng
Lai, Yi-Shao
Hsu, Wen-Kuang
Wu, Wen-Fa
Chou, Chang-Pin
機械工程學系
Department of Mechanical Engineering
公開日期: 1-Dec-2011
摘要: In this study, the SiGe epilayers were created on silicon substrate by using ultra-high vacuum chemical vapor deposition (UHV/CVD) and followed by annealing procedures. The frictional behaviors of SiGe epilayers were subjected to nanoscratch techniques under a ramping load. Damage caused by scratching was examined by atomic force microscopy (AFM); the results showed that the pile-up phenomena were significant on both sides of the scratch in the case of SiGe epilayers, suggesting that the dynamic deformation behavior was dominated by cracking as ploughing occurred during scratching. In addition, the SiGe epilayers films with different annealed conditions exhibited the decrease in coefficient of friction (COF), indicating the higher shear resistance exist in annealed SiGe epilayers, which probably affect the film uniformity and device yield under IC process integration. (C) 2011 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.microrel.2011.06.063
http://hdl.handle.net/11536/15373
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2011.06.063
期刊: MICROELECTRONICS RELIABILITY
Volume: 51
Issue: 12
起始頁: 2223
結束頁: 2227
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