標題: Terahertz InP HBT Oscillators
作者: Rieh, Jae-Sung
Yun, Jongwon
Yoon, Daekeun
Kim, Jungsoo
Son, Heekang
國際半導體學院
International College of Semiconductor Technology
關鍵字: Submillimeter wave circuits;heterojunction bipolar transistors (HBT);oscillators
公開日期: 1-Jan-2018
摘要: An overview of various high-frequency InP HBT oscillators that can be used as terahertz signal sources is presented. A 300-GHz fundamental-mode oscillator was first developed based on InP HBT technology, and then subsequently modified for additional oscillators with improved function or performance, which includes a 300-GHz voltage-controlled oscillator (VCO), a 280-GHz high-power oscillator with 10-dBm output, and a 600-GHz push-push oscillator. The 300-GHz oscillator was also successfully employed as a signal source for THz imaging, which is also briefly described.
URI: http://hdl.handle.net/11536/153854
ISBN: 978-1-5386-5971-7
期刊: 2018 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT)
起始頁: 82
結束頁: 84
Appears in Collections:Conferences Paper