標題: Design, Fabrication, and Characterization of n-Si IBC Solar Cells Using PERC Technology
作者: Peng, Yin-Wei
Chen, Chun-Heng
Li, Li-Yu
Hsin, Pi-Yu
Yu, Peichen
Huang, Chorng-Jye
Gan, Jon-Yiew
光電工程學系
Department of Photonics
關鍵字: Interdigitated-back-contact cell (IBC) and passivated emitter and rear cell (PERC)
公開日期: 1-三月-2020
摘要: In this article, high-efficiency n-Si interdigitated back contact solar cells (IBC) were fabricated with the perc-like process. The cell was demonstrated with the efficiency of 22.16% (cell area = 10 x 10 cm), open-circuit voltage of 685 mV, short-circuit current density of 41.21 mA/cm(2), and fill factor of 78.48%. The low fill factor can be attributed to the high base recombination taking place under high-level injection. Fill factor over 81% and, therefore, cell efficiency over 23% is expected when wafers of high bulk lifetime (tau(bulk) >= 10 ms) or low resistivity (rho <= 1 omega center dot cm) are used. The light I-V curve was fully characterized with the optical and electronic properties obtained from independent measurements.
URI: http://dx.doi.org/10.1109/JPHOTOV.2019.2958186
http://hdl.handle.net/11536/153888
ISSN: 2156-3381
DOI: 10.1109/JPHOTOV.2019.2958186
期刊: IEEE JOURNAL OF PHOTOVOLTAICS
Volume: 10
Issue: 2
起始頁: 383
結束頁: 389
顯示於類別:期刊論文