標題: | Design, Fabrication, and Characterization of n-Si IBC Solar Cells Using PERC Technology |
作者: | Peng, Yin-Wei Chen, Chun-Heng Li, Li-Yu Hsin, Pi-Yu Yu, Peichen Huang, Chorng-Jye Gan, Jon-Yiew 光電工程學系 Department of Photonics |
關鍵字: | Interdigitated-back-contact cell (IBC) and passivated emitter and rear cell (PERC) |
公開日期: | 1-三月-2020 |
摘要: | In this article, high-efficiency n-Si interdigitated back contact solar cells (IBC) were fabricated with the perc-like process. The cell was demonstrated with the efficiency of 22.16% (cell area = 10 x 10 cm), open-circuit voltage of 685 mV, short-circuit current density of 41.21 mA/cm(2), and fill factor of 78.48%. The low fill factor can be attributed to the high base recombination taking place under high-level injection. Fill factor over 81% and, therefore, cell efficiency over 23% is expected when wafers of high bulk lifetime (tau(bulk) >= 10 ms) or low resistivity (rho <= 1 omega center dot cm) are used. The light I-V curve was fully characterized with the optical and electronic properties obtained from independent measurements. |
URI: | http://dx.doi.org/10.1109/JPHOTOV.2019.2958186 http://hdl.handle.net/11536/153888 |
ISSN: | 2156-3381 |
DOI: | 10.1109/JPHOTOV.2019.2958186 |
期刊: | IEEE JOURNAL OF PHOTOVOLTAICS |
Volume: | 10 |
Issue: | 2 |
起始頁: | 383 |
結束頁: | 389 |
顯示於類別: | 期刊論文 |