標題: Random telegraph noise in gate-all-around silicon nanowire MOSFETs induced by a single charge trap or random interface traps
作者: Kola, Sekhar Reddy
Li, Miming
Thoti, Narasimhulu
交大名義發表
電機工程學系
電信工程研究所
電機資訊國際碩士學位學程
National Chiao Tung University
Department of Electrical and Computer Engineering
Institute of Communications Engineering
EECS International Graduate Program-Master
關鍵字: Random telegraph noise;Single charge trap;Random interface traps;GAA Si NW MOSFETs;Characteristic fluctuation;Statistical device simulation;Experimental calibration
公開日期: 1-Mar-2020
摘要: The random telegraph noise (RTN) in gate-all-around (GAA) silicon (Si) nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) induced by a single charge trap (SCT) or random interface traps (RITs) is studied for the first time. An experimentally validated three-dimensional quantum-mechanically-corrected device simulation is advanced to investigate the explored devices. The magnitude of the RTN decreases with increasing gate voltage to different extents for the planar MOSFET, bulk FinFET, and GAA Si NW MOSFET devices, owing to the reduction in the conducting carriers along the channel. For the GAA Si NW MOSFET, the reduction of the fluctuation of threshold voltage in the presence of RITs is about 25 and 3 times when compared with the planar MOSFET and bulk FinFET device, respectively, whereas this reduction in the presence of an SCT is about 6 and 2.6 times, respectively. For the GAA Si NW MOSFET, the reduction of the RTN in the presence of RITs is about 7.5 and 4.7 times when compared with the planar MOSFET and bulk FinFET device, respectively, whereas this reduction in the presence of an SCT is about 22 and 6 times, respectively. At given threshold voltage, compared with the results for the planar MOSFETs and bulk FinFET, the GAA Si NW MOSFET exhibits minimal characteristic variability and RTN owing to the ultimate electrostatic control of the gate from the point of view of electrostatic integrity.
URI: http://dx.doi.org/10.1007/s10825-019-01438-9
http://hdl.handle.net/11536/153947
ISSN: 1569-8025
DOI: 10.1007/s10825-019-01438-9
期刊: JOURNAL OF COMPUTATIONAL ELECTRONICS
Volume: 19
Issue: 1
起始頁: 253
結束頁: 262
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