完整後設資料紀錄
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dc.contributor.authorJeng, Shie-Changen_US
dc.date.accessioned2020-05-05T00:01:33Z-
dc.date.available2020-05-05T00:01:33Z-
dc.date.issued1970-01-01en_US
dc.identifier.issn0267-8292en_US
dc.identifier.urihttp://dx.doi.org/10.1080/02678292.2020.1733114en_US
dc.identifier.urihttp://hdl.handle.net/11536/153983-
dc.description.abstractThe Tamm-plasmon-polariton (TPP) occurs at the interface between a metallic film and the photonic-crystal (PC) substrate. Unlike conventional surface-plasmon-polariton (SPP), TPP can be directly excited by both the transverse electric (TE) and transverse magnetic (TM) electromagnetic waves without using additional coupling optics. The fact that the optical functionality of most plasmonics devices is determined after fabrication limits their applications. Tunable SPP devices by applying liquid crystals (LCs) have been widely demonstrated due to their large birefringence and easy controllability via external stimuli. However, actively tuning TPP is difficult because the localised electric field is between the metallic film and PC substrate, the change of refractive index above the metallic film has only small influences on TPP. This article is intended to briefly review recent progress towards using LCs for actively tuning TPP devices. Not only TPP devices can gain benefits from LCs, we will also discuss the applications of TPP for measuring the anisotropy of the alignment films of LC devices. The sensitivity of the proposed scheme will be discussed.en_US
dc.language.isoen_USen_US
dc.subjectTamm-plasmon-polaritonen_US
dc.subjecttunable plasmonic devicesen_US
dc.subjectliquid crystal alignmenten_US
dc.subjectanisotropic filmsen_US
dc.titleApplications of Tamm plasmon-liquid crystal devicesen_US
dc.typeArticleen_US
dc.identifier.doi10.1080/02678292.2020.1733114en_US
dc.identifier.journalLIQUID CRYSTALSen_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department影像與生醫光電研究所zh_TW
dc.contributor.departmentInstitute of Imaging and Biomedical Photonicsen_US
dc.identifier.wosnumberWOS:000518261100001en_US
dc.citation.woscount0en_US
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