Study of Enhancement-Mode Tri-Gate InAs HEMTs for Low Noise Application

Abstract

An enhancement-mode tri-gate InAs HEMT is investigated for low noise application in this paper. The 3-D tri-gate structure is sidewall-gate-metal connected to InAlAs layers, the gate connection to the InAlAs layers increases their potential to the positive direction with increasing the gate bias, resulting gate control ability enhancement. Compared with planar device, the tri-gate device shows high transconductance and low noise figure. The enhancement-mode tri-gate device exhibits excellent low noise figure with less than 3.5 dB when the device operation frequency range of 18 GHz to 50 GHz.