標題: Study of Enhancement-Mode Tri-Gate InAs HEMTs for Low Noise Application
作者: Wang, C.
Lin, Y. C.
Kuo, C. N.
Lee, M. W.
Yao, J. N.
Huang, T. J.
Hsu, H. T.
Chang, Edward Y.
電子工程學系及電子研究所
國際半導體學院
Department of Electronics Engineering and Institute of Electronics
International College of Semiconductor Technology
關鍵字: tri-gate;InAs HEMT;low noise figure;E-mode
公開日期: 1-Jan-2019
摘要: An enhancement-mode tri-gate InAs HEMT is investigated for low noise application in this paper. The 3-D tri-gate structure is sidewall-gate-metal connected to InAlAs layers, the gate connection to the InAlAs layers increases their potential to the positive direction with increasing the gate bias, resulting gate control ability enhancement. Compared with planar device, the tri-gate device shows high transconductance and low noise figure. The enhancement-mode tri-gate device exhibits excellent low noise figure with less than 3.5 dB when the device operation frequency range of 18 GHz to 50 GHz.
URI: http://hdl.handle.net/11536/154015
ISBN: 978-2-87487-056-9
期刊: 2019 14TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2019)
起始頁: 204
結束頁: 207
Appears in Collections:Conferences Paper