Fabrication and Characterization of < 100 >-Oriented Quasi-single Crystalline Cu Lines

Abstract

Nanotwinned copper (nt-Cu) films with < 111 > crystal orientation were electroplated on Si wafers by pulse plating, with original grain size of similar to 1.4 mu m. By patterning and annealing the nt-Cu film at 450-500 degrees C for 1 h, we can grow a large number of < 100 >-oriented quasi-single crystal Cu lines that are 200 and 500 pm in length and 60 pm in width. We perform anisotropic grain growth on a Si substrate to fabricate quasi-single crystal Cu lines array of < 100 > crystal orientation. These large < 100 > Cu single crystals may have potential applications as interconnects in three-dimensional integrated circuit technology.