標題: Semi-Empirical RC Circuit Model for Non-Filamentary Bi-Layer OxRAM Devices
作者: Majumdar, Swatilekha
Chen, Ying
Hudec, Boris
Hou, Tuo-Hung
Suri, Manan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Compact model;non-filamentary oxide-based random access memory (OxRAM);OxRAM;resistive switching
公開日期: 1-Mar-2020
摘要: In this brief, we present a semi-empirical RC-circuit-based compact model for non-filamentary bi-layer oxide-based random access memory (OxRAM) devices. The proposed RC model captures both dc and pulse behaviors of the OxRAM devices. Additionally, the model is also able to reproduce the electrical behavior of these devices on application of arbitrary SET/RESET pulses. The model is verified for three non-filamentary OxRAM devices: Ta/HfO2/Al:TiO2/TiN, TiN/TaO/HfOx/TiON/TiN, and Al/AlO sigma /Ta2O5-x/TaOy/W. Through this model, simulation versus experimental error of less than 10% is achieved.
URI: http://dx.doi.org/10.1109/TED.2020.2964113
http://hdl.handle.net/11536/154168
ISSN: 0018-9383
DOI: 10.1109/TED.2020.2964113
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 67
Issue: 3
起始頁: 1348
結束頁: 1352
Appears in Collections:Articles