標題: Direct Tunneling and Related TMR Anomalies in Magnetic Tunnel Junctions With Embedded Nanoparticles
作者: Turenne, Diego
Useinov, Artur
國際半導體學院
International College of Semiconductor Technology
關鍵字: Conductance quantization;magnetic tunnel junctions;nanoparticles (NPs);tunnel magnetoresistance (TMR)
公開日期: 1-Dec-2019
摘要: This article shows simulations of the electron direct tunneling through the MgO insulating layer in the magnetic tunnel junction with embedded non-magnetic and magnetic nanoparticles (NPs). The approach of weak magnetic NPs is considered at low temperature, where the related values of the electron wavenumbers, as well as exchange energy in NPs, are a few times smaller than in the bulk. The results show the opportunities for the significant enhancement of the tunnel magnetoresistance (TMR) with voltage. The theory predicts and explains some anomalous periodicity of TMR with voltage including the stable plateau at some conditions.
URI: http://dx.doi.org/10.1109/TMAG.2019.2936367
http://hdl.handle.net/11536/154178
ISSN: 0018-9464
DOI: 10.1109/TMAG.2019.2936367
期刊: IEEE TRANSACTIONS ON MAGNETICS
Volume: 55
Issue: 12
起始頁: 0
結束頁: 0
Appears in Collections:Articles