標題: Variability Analysis for Ferroelectric FET Nonvolatile Memories Considering Random Ferroelectric-Dielectric Phase Distribution
作者: Liu, You-Sheng
Su, Pin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Ferroelectric field-effect transistor (FeFET);memory window (MW);random variation;nonvolatile memory (NVM)
公開日期: 1-Mar-2020
摘要: This paper investigates the impact of the random ferroelectric-dielectric (FE-DE) phase distribution on the memory window (MW) of the ferroelectric field-effect transistor (FeFET) nonvolatile memory (NVM) with the aid of TCAD atomistic simulations. Our study indicates that the DE path from source to drain is detrimental to the MW, and down-scaling the gate length substantially increases the probability of forming DE path and the variability in the MW. In addition, the MW variability for scaled FeFET devices can be mitigated by reducing the grain size, even under the same grain-to-channel area ratio. Besides, when down-scaling the insulator thickness to increase the MW, the increased MW variability due to the random FE-DE grains needs to be considered. Our study may provide insights for future scaling of FeFET NVMs.
URI: http://dx.doi.org/10.1109/LED.2020.2967423
http://hdl.handle.net/11536/154183
ISSN: 0741-3106
DOI: 10.1109/LED.2020.2967423
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 41
Issue: 3
起始頁: 369
結束頁: 372
Appears in Collections:Articles