標題: Enhancement of Mechanical Bending Stress Endurance Using an Organic Trench Structure in Foldable Polycrystalline Silicon TFTs
作者: Zheng, Yu-Zhe
Huang, Shin-Ping
Chen, Po-Hsun
Chang, Ting-Chang
Tsai, Tsung-Ming
Chu, Ann-Kuo
Hung, Yang-Hao
Shih, Yu-Shan
Wang, Yu-Xuan
Wu, Chia-Chuan
Tu, Yu-Fa
Chen, Yu-An
Sun, Pei-Jun
Chung, Yu-Hua
Chen, Wei-Han
Wang, Tai-Jui
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Stress;Thin film transistors;Logic gates;Buffer layers;Silicon;Insulators;Degradation;Foldable electronics;LTPS TFTs;organic trench;mechanical bending stress
公開日期: 1-五月-2020
摘要: This letter proposes a new organic trench structure which can enhance the endurance of polycrystalline silicon thin film transistors (TFTs) under mechanical bending stress. It compares conventional structure TFTs to devices with an organic trench to examine reliability after undergoing 100,000 iterations of channel width-axis (100,000'WC) compression at R = 2mm. Due to the low Young's modulus of organic materials, stress while undergoing bending strain is desorbed to the buffer layer, which can lower the overall stress in TFTs. Furthermore, an optimal location and ideal length for such an organic trench is evaluated by mechanical bending simulation.
URI: http://dx.doi.org/10.1109/LED.2020.2980123
http://hdl.handle.net/11536/154313
ISSN: 0741-3106
DOI: 10.1109/LED.2020.2980123
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 41
Issue: 5
起始頁: 721
結束頁: 724
顯示於類別:期刊論文