標題: Enhanced data retention characteristic on SOHOS-type nonvolatile flash memory with CF4-plasma-induced deep electron trap level
作者: Hsieh, Chih-Ren
Chen, Yung-Yu
Lin, Wen-Shin
Lin, Gray
Lou, Jen-Chung
電機工程學系
Department of Electrical and Computer Engineering
公開日期: 2011
摘要: The improved data retention characteristics of Polysilicon-oxide-hafnium oxide-oxide-silicon (SOHOS) type nonvolatile memory were obtained by post-HfO2 trapping layer deposition tetrafluoromethane (CF4) plasma treatment. The memory characteristics such as program/erase speed, retention and endurance were studied comprehensively. That fluorine atoms incorporated into Hf-based high-k material eliminate shallow trap defect level effectively and remain deeper trap level. Although the shallow traps of the HfOF trapping layer SOHOS memory have passivated, it doesn't deteriorate the program/erase speed obviously and retention characteristic was then improved because of deeper electron storage level. The results clearly indicate CF4 plasma treatment-induced deep electron storage level is a feasible technology for future SOHOS-type nonvolatile flash memory application.
URI: http://hdl.handle.net/11536/15431
http://dx.doi.org/10.1149/1.3568868
ISBN: 978-1-60768-213-4
ISSN: 1938-5862
DOI: 10.1149/1.3568868
期刊: SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS
Volume: 35
Issue: 2
起始頁: 257
結束頁: 263
Appears in Collections:Conferences Paper


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