標題: Nitride-stressor and quantum-size engineering in Ge quantum-dot photoluminescence wavelength and exciton lifetime
作者: Kuo, Yu-Hong
Chiu, Shih-Hsuan
Tien, Che-Wei
Lin, Sheng-Di
Chang, Wen-Hao
George, Thomas
Lin, Horng-Chih
Li, Pei-Wen
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
關鍵字: germanium;quantum dot;Si3N4;strain;quantum confinement
公開日期: 1-Mar-2020
摘要: We report local nitride-stressor engineering in combination with quantum-size tunability in Ge quantum dots (QDs) for tailoring photoluminescence (PL) wavelength and exciton lifetime. Spherical-shaped Ge QDs with tunable diameters ranging from 25-90 nm embedded within layers of thermally-grown SiO2 and chemical-vapor-deposited Si3N4 were fabricated by thermal oxidation of lithographically-patterned poly-Si0.85Ge0.15 pillars on top of buffer layers of SiO2 and Si3N4, respectively, in a self-organization approach. The effects of local stressors and quantum confinement on the strain and optical properties of Ge QDs were systematically investigated using Raman and PL measurements. We observed that when Ge QD diameter gets smaller than 60 nm, quantum confinement sets in and has a predominant influence on PL wavelength and exciton lifetime. Our self-organized Ge QD/Si3N4 system provides a generic building block for the fabrication of active photonic devices on Si3N4 platform.
URI: http://dx.doi.org/10.1088/2399-1984/ab794d
http://hdl.handle.net/11536/154417
DOI: 10.1088/2399-1984/ab794d
期刊: NANO FUTURES
Volume: 4
Issue: 1
起始頁: 0
結束頁: 0
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