完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLi, Yu-Jinen_US
dc.contributor.authorTu, King-Ningen_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2020-07-01T05:21:22Z-
dc.date.available2020-07-01T05:21:22Z-
dc.date.issued2020-03-02en_US
dc.identifier.urihttp://dx.doi.org/10.3390/ma13061310en_US
dc.identifier.urihttp://hdl.handle.net/11536/154453-
dc.description.abstractWe performed tensile tests on highly <111>-oriented nanotwinned copper (nt-Cu) foils with different columnar grain structures. For a systematic study, we altered the microstructure of the foils by tuning the electroplating electrolyte and annealing temperatures under a nitrogen atmosphere. The results show that the yield strength ranges from 300 to 700 MPa, and elongation spans from 5% to 25%. Knowing the measured twin spacing and average grain size, and combining the confined layer slip with the Hall-Petch equation, we calculated the theoretical yield strength of the nt-Cu with different microstructures, and the theoretic values match the experiment results. Owing to the unique crystal orientation properties of <111>-oriented columnar grains, dislocations induced by slip are very limited. The Schmid factor of grains along the tensile axis direction is highly identical, so the plastic deformation is much more suitably explained by the Schmid factor model. Thus, we replace the Taylor factor with the Schmid factor in the slip model of nt-Cu.en_US
dc.language.isoen_USen_US
dc.subjectnano-twinned Cuen_US
dc.subjecttensile propertiesen_US
dc.subjectgrain microstructuresen_US
dc.titleTensile Properties of < 111 >-Oriented Nanotwinned Cu with Different Columnar Grain Structuresen_US
dc.typeArticleen_US
dc.identifier.doi10.3390/ma13061310en_US
dc.identifier.journalMATERIALSen_US
dc.citation.volume13en_US
dc.citation.issue6en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000529208000049en_US
dc.citation.woscount0en_US
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