完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lu, Cheng-Hsien | en_US |
dc.contributor.author | Kho, Yi-Tung | en_US |
dc.contributor.author | Yang, Yu-Tao | en_US |
dc.contributor.author | Chen, Yu-Pei | en_US |
dc.contributor.author | Chen, Chiao-Pei | en_US |
dc.contributor.author | Hung, Tsung-Tai | en_US |
dc.contributor.author | Chen, Chiu-Feng | en_US |
dc.contributor.author | Chen, Kuan-Neng | en_US |
dc.date.accessioned | 2020-07-01T05:21:48Z | - |
dc.date.available | 2020-07-01T05:21:48Z | - |
dc.date.issued | 2018-01-01 | en_US |
dc.identifier.isbn | 978-1-5386-4998-5 | en_US |
dc.identifier.issn | 0569-5503 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/ECTC.2018.00067 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/154483 | - |
dc.description.abstract | In this paper, the four-point bending method experiments were carried out with different polyimides and passivation layers for realization of adhesion property below 400 degrees C. Three types of passivation layers, thermal oxide, tetraethoxysilane (TEOS) oxide, silicon nitride, and three types of polyimides, with hydrophobic silane, with hydrophilic silane and without silane, and annealing temperature were all considered in this paper. Moreover, the relation between adhesion strength and surface roughness is discussed. Finally, a low thermal budget (250-375 degrees C) polyimide/metal hybrid bonding scheme with good stress release was proposed for future hybrid bonding applications. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | adhesion | en_US |
dc.subject | four-point bending | en_US |
dc.subject | polyimide | en_US |
dc.subject | polyimide-like | en_US |
dc.subject | hybrid bonding | en_US |
dc.subject | 3D integration | en_US |
dc.title | Adhesion Property of Polyimide and Passivation Layer for Polymer/metal Wafer-level Hybrid Bonding in 3D Integration | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.doi | 10.1109/ECTC.2018.00067 | en_US |
dc.identifier.journal | 2018 IEEE 68TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2018) | en_US |
dc.citation.spage | 401 | en_US |
dc.citation.epage | 406 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000514675100060 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 會議論文 |