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dc.contributor.authorLu, Cheng-Hsienen_US
dc.contributor.authorKho, Yi-Tungen_US
dc.contributor.authorYang, Yu-Taoen_US
dc.contributor.authorChen, Yu-Peien_US
dc.contributor.authorChen, Chiao-Peien_US
dc.contributor.authorHung, Tsung-Taien_US
dc.contributor.authorChen, Chiu-Fengen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.date.accessioned2020-07-01T05:21:48Z-
dc.date.available2020-07-01T05:21:48Z-
dc.date.issued2018-01-01en_US
dc.identifier.isbn978-1-5386-4998-5en_US
dc.identifier.issn0569-5503en_US
dc.identifier.urihttp://dx.doi.org/10.1109/ECTC.2018.00067en_US
dc.identifier.urihttp://hdl.handle.net/11536/154483-
dc.description.abstractIn this paper, the four-point bending method experiments were carried out with different polyimides and passivation layers for realization of adhesion property below 400 degrees C. Three types of passivation layers, thermal oxide, tetraethoxysilane (TEOS) oxide, silicon nitride, and three types of polyimides, with hydrophobic silane, with hydrophilic silane and without silane, and annealing temperature were all considered in this paper. Moreover, the relation between adhesion strength and surface roughness is discussed. Finally, a low thermal budget (250-375 degrees C) polyimide/metal hybrid bonding scheme with good stress release was proposed for future hybrid bonding applications.en_US
dc.language.isoen_USen_US
dc.subjectadhesionen_US
dc.subjectfour-point bendingen_US
dc.subjectpolyimideen_US
dc.subjectpolyimide-likeen_US
dc.subjecthybrid bondingen_US
dc.subject3D integrationen_US
dc.titleAdhesion Property of Polyimide and Passivation Layer for Polymer/metal Wafer-level Hybrid Bonding in 3D Integrationen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/ECTC.2018.00067en_US
dc.identifier.journal2018 IEEE 68TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2018)en_US
dc.citation.spage401en_US
dc.citation.epage406en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000514675100060en_US
dc.citation.woscount0en_US
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