標題: Characteristics of Poly-Si Junctionless FinFETs With HfZrO Using Forming Gas Annealing
作者: Chung, Sheng-Ti
Lee, Yao-Jen
Chao, Tien-Sheng
電子物理學系
Department of Electrophysics
關鍵字: Annealing;Capacitors;Films;Logic gates;FinFETs;Leakage currents;Junctionless field-effect-transistor (JL-FET);ferroelectric;PMA;FinFETs;forming gas annealing (FGA)
公開日期: 1-Jan-2020
摘要: In this study, an effective method was proposed to enhance the current drivability of junctionless field-effect transistors (JL-FETs) by utilizing ferroelectric effects. The ferroelectric layers were deposited on JL-FinFETs. The poly-Si junctionless FinFETs (JL-FinFETs) with HfZrO were successfully fabricated and demonstrated. The subthreshold slope (S.S.) of JL-FinFETs with HfZrO was very sensitive to post-metal annealing (PMA) conditions and fin width. With PMA at 700 & x00B0;C, steeper S.S. and I<sub>on</sub>& x002F;I<sub>off</sub>> 10(7) could be obtained owing to the ferroelectric effect. JL-FinFETs with PMA at 700 & x00B0;C possessed lower I<sub>off</sub> and offered the promise of higher integration flexibility for Si CMOS compatible process for future applications. Besides, the JL-FinFETs with forming gas annealing (FGA) had a small hysteresis and achieved the improved S.S.
URI: http://dx.doi.org/10.1109/TNANO.2020.2992797
http://hdl.handle.net/11536/154492
ISSN: 1536-125X
DOI: 10.1109/TNANO.2020.2992797
期刊: IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume: 19
起始頁: 390
結束頁: 396
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