Full metadata record
DC FieldValueLanguage
dc.contributor.authorSung, Po-Jungen_US
dc.contributor.authorSu, Chun-Jungen_US
dc.contributor.authorLo, Shih-Hsuanen_US
dc.contributor.authorHsueh, Fu-Kuoen_US
dc.contributor.authorLu, Darsen D.en_US
dc.contributor.authorLee, Yao-Jenen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.date.accessioned2020-07-01T05:22:10Z-
dc.date.available2020-07-01T05:22:10Z-
dc.date.issued2020-01-01en_US
dc.identifier.issn2168-6734en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JEDS.2020.2987005en_US
dc.identifier.urihttp://hdl.handle.net/11536/154592-
dc.description.abstractIn this study, ferroelectric FETs (FeFETs) and CMOS inverters are fabricated and analyzed, exhibiting 13% of 593 devices with sub-60 mV subthreshold swing (SS) at room temperature. Forming gas annealing (FGA) is found to not only enhance ferroelectricity but also significantly improve FeFET electrostatics. The experimental results indicate that FeFET with a narrow width shows weaker ferroelectric properties, and SS of sub-60 mV/dec with I-D change less than two orders of magnitude. However, FeFET with a broad channel width reveals stronger ferroelectric properties, and SS of sub-60 mV/dec is over 2 orders of magnitude of I-d. Finally, typical voltage transfer characteristics (VTCs) of a FeFET CMOS inverter with double sweeps at various V-D from 0.6 to 2 V are demonstrated. The results show that hysteresis in a FeFET CMOS inverter could have both clockwise (CW) and counter-clockwise (CCW) loops.en_US
dc.language.isoen_USen_US
dc.subjectFeFETen_US
dc.subjectforming gas annealing (FGA)en_US
dc.subjectsteep slopen_US
dc.subjectHfZrO2en_US
dc.subjectferroelectricen_US
dc.titleEffects of Forming Gas Annealing and Channel Dimensions on the Electrical Characteristics of FeFETs and CMOS Inverteren_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JEDS.2020.2987005en_US
dc.identifier.journalIEEE JOURNAL OF THE ELECTRON DEVICES SOCIETYen_US
dc.citation.volume8en_US
dc.citation.issue1en_US
dc.citation.spage474en_US
dc.citation.epage480en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000536054900003en_US
dc.citation.woscount0en_US
Appears in Collections:Articles