標題: | Scanning Moire Fringe Method: A Superior Approach to Perceive Defects, Interfaces, and Distortion in 2D Materials |
作者: | Lin, Yung-Chang Ji, Hyun Goo Chang, Li-Jen Chang, Yao-Pang Liu, Zheng Lee, Gun-Do Chiu, Po-Wen Ago, Hiroki Suenaga, Kazu 電信工程研究所 Institute of Communications Engineering |
關鍵字: | STEM;scan moire fringe;transition-metal dichalcogenides;strain field;dislocations |
公開日期: | 26-五月-2020 |
摘要: | Scanning moire fringe (SMF) is a widely utilized technique for the precise measurement of the strain field in semiconductor transistors and heterointerfaces. With the growing challenges of traditional chip scaling, two-dimensional (2D) materials turn out to be ideal candidates for incorporation into semiconductor devices. Therefore, a method to efficiently locate defects and grain boundaries in 2D materials is highly essential. Here, we present a demonstration of using the SMF method to locate the domain boundaries at the nearly coherent interfaces with sub-angstrom spatial resolution under submicron fields of views. The strain field of small angle grain boundary and lateral heterojunction are instantaneously found and precisely determined by a quick SMF method without any atomic resolution images. |
URI: | http://dx.doi.org/10.1021/acsnano.0c01729 http://hdl.handle.net/11536/154636 |
ISSN: | 1936-0851 |
DOI: | 10.1021/acsnano.0c01729 |
期刊: | ACS NANO |
Volume: | 14 |
Issue: | 5 |
起始頁: | 6034 |
結束頁: | 6042 |
顯示於類別: | 期刊論文 |