標題: Reduction of Contact Resistivity by Nano-Textured Contact
作者: Tsui, Bing-Yue
Lee, Ya-Hsin
Lee, Chen-Yi
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Contact resistance;contact resistivity;contact area;Schottky barrier;nano-texture
公開日期: 1-一月-1970
摘要: The feasibility of reducing contact resistance by adding nano-textures on the contact surface is evaluated by three-dimensional simulation. Upward and downward pyramids and hemispheres are considered, and the effects of contact area and electric field are discussed. The downward nano-texture has a stronger electric field than the upward nano-texture; thus the increasing contact area will be more effectively used and lead to a greater improvement effect. On the other hand, the electric field of the hemisphere nano-texture is lower than that of the pyramid nano-texture. With proper design, the nano-textured contact can effectively reduce contact resistance up to 30-50%. Therefore, the proposed nano-textured contact is a promising approach with contact resistivity approaching physical limits.
URI: http://dx.doi.org/10.1007/s11664-020-08236-1
http://hdl.handle.net/11536/154916
ISSN: 0361-5235
DOI: 10.1007/s11664-020-08236-1
期刊: JOURNAL OF ELECTRONIC MATERIALS
起始頁: 0
結束頁: 0
顯示於類別:期刊論文