標題: | Reduction of Contact Resistivity by Nano-Textured Contact |
作者: | Tsui, Bing-Yue Lee, Ya-Hsin Lee, Chen-Yi 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Contact resistance;contact resistivity;contact area;Schottky barrier;nano-texture |
公開日期: | 1-一月-1970 |
摘要: | The feasibility of reducing contact resistance by adding nano-textures on the contact surface is evaluated by three-dimensional simulation. Upward and downward pyramids and hemispheres are considered, and the effects of contact area and electric field are discussed. The downward nano-texture has a stronger electric field than the upward nano-texture; thus the increasing contact area will be more effectively used and lead to a greater improvement effect. On the other hand, the electric field of the hemisphere nano-texture is lower than that of the pyramid nano-texture. With proper design, the nano-textured contact can effectively reduce contact resistance up to 30-50%. Therefore, the proposed nano-textured contact is a promising approach with contact resistivity approaching physical limits. |
URI: | http://dx.doi.org/10.1007/s11664-020-08236-1 http://hdl.handle.net/11536/154916 |
ISSN: | 0361-5235 |
DOI: | 10.1007/s11664-020-08236-1 |
期刊: | JOURNAL OF ELECTRONIC MATERIALS |
起始頁: | 0 |
結束頁: | 0 |
顯示於類別: | 期刊論文 |