完整後設資料紀錄
DC 欄位語言
dc.contributor.authorTsai, Yu-Shengen_US
dc.contributor.authorHung, Chen Haoen_US
dc.contributor.authorChan, Wei Lunen_US
dc.contributor.authorTsai, Shang Jeen_US
dc.contributor.authorLee, Yu Shanen_US
dc.contributor.authorHuang, Wen Changen_US
dc.contributor.authorWu, YewChung Sermonen_US
dc.contributor.authorChen, Hsiangen_US
dc.date.accessioned2020-10-05T01:59:48Z-
dc.date.available2020-10-05T01:59:48Z-
dc.date.issued2020-08-01en_US
dc.identifier.issn0042-207Xen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.vacuum.2020.109454en_US
dc.identifier.urihttp://hdl.handle.net/11536/154938-
dc.description.abstractZnO/ZnS core-shell nanostructures were successfully synthesized on porous silicon substrates using hydrothermal methods. Multiple morphological and crystalline characterizations were performed on the structures. Results indicate that a uniformly grown ZnS shell with a thickness of around 10 nm could be observed on the cross-section of ZnO/ZnS core-shell structures. Furthermore, different crystalline phases and morphologies could be observed in selected area diffraction patterns between neighboring nanostructures. Material compositional analysis conducted by energy-dispersive X-ray spectroscopy indicate that varied nanostructure element compositions grew perpendicular to the substrate. ZnS/ZnO nanostructures on porous silicon substrates show promise for future optoelectronic and electronic device applications.en_US
dc.language.isoen_USen_US
dc.subjectCrystalline phasesen_US
dc.subjectZnO/ZnS core Shellen_US
dc.subjectPorous siliconen_US
dc.subjectCross sectionen_US
dc.subjectNanograinen_US
dc.titleMorphological and crystalline analysis of ZnO/ZnS nanostructures on porous silicon substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.vacuum.2020.109454en_US
dc.identifier.journalVACUUMen_US
dc.citation.volume178en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000541439800027en_US
dc.citation.woscount1en_US
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