標題: | Energy Transformation Between the Inductor and the Power Transistor for the Unclamped Inductive Switching (UIS) Test |
作者: | Nidhi, Karuna Lee, Jian-Hsing Huang, Shao-Chang Ker, Ming-Dou 交大名義發表 電子工程學系及電子研究所 National Chiao Tung University Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Unclamped inductive switching (UIS);avalanche breakdown;power transistor;inductor;series resistance;second breakdown |
公開日期: | 1-六月-2020 |
摘要: | The fundamental model of energy transformation between the inductor and the power transistor for the unclamped inductive switching (UIS) test is inspected. Based on the experimental results, the energy stored in the inductor at the period of the channel turn-on can be dissipated by the power transistor after the channel is turned off. In this work, a new theoretical model to well describe the electrical and thermal behaviors of the power transistor during the unclamped inductive switching (UIS) test has been identified and analyzed with the experimental silicon results under different inductor values in 0.15 mu m BCD process. The total UIS energy reduced due to series resistance of the inductor and the power transistor has been theoretically explained and well matches with the experimental measured results on silicon. |
URI: | http://dx.doi.org/10.1109/TDMR.2020.2985306 http://hdl.handle.net/11536/154968 |
ISSN: | 1530-4388 |
DOI: | 10.1109/TDMR.2020.2985306 |
期刊: | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY |
Volume: | 20 |
Issue: | 2 |
起始頁: | 413 |
結束頁: | 419 |
顯示於類別: | 期刊論文 |