標題: On the Impact of Electron Leakage on the Efficiency Droop for AlGaN Based Deep Ultraviolet Light Emitting Diodes
作者: Chu, Chunshuang
Tian, Kangkai
Che, Jiamang
Shao, Hua
Kou, Jianquan
Zhang, Yonghui
Zhang, Zi-Hui
Kuo, Hao-Chung
光電工程學系
光電工程研究所
Department of Photonics
Institute of EO Enginerring
關鍵字: DUV LED;efficiency droop;electron leakage;Auger recombination
公開日期: 1-Jun-2020
摘要: In this work, we have investigated the origin of efficiency droop for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). We find that the efficiency droop is likely to be caused by the electron leakage for DUV LEDs studied in this work. The electron leakage arises from the unbalanced electron and hole injection efficiencies. The correlation between the efficiency droop and the electron leakage can be numerically calculated by manipulating the conduction band barrier height of the p-AlGaN electron blocking layer (p-EBL) for the proposed DUV LEDs. For the purpose of demonstrating that the efficiency droop for DUV LEDs can be experimentally decreased by reducing the electron leakage, a p(+)-GaN/In0.15Ga0.85N/n(+)-GaN tunnel junction on DUV LED is grown by using metal organic chemical vapor deposition (MOCVD) technology. The tunnel junction helps to enhance the hole injection, thus decreasing the electron leakage and the efficiency droop. Moreover, the parasitic emission in the p-type hole injection layer is no longer observed thanks to the decreased electron leakage level.
URI: http://dx.doi.org/10.1109/JPHOT.2020.2997343
http://hdl.handle.net/11536/154993
ISSN: 1943-0655
DOI: 10.1109/JPHOT.2020.2997343
期刊: IEEE PHOTONICS JOURNAL
Volume: 12
Issue: 3
起始頁: 0
結束頁: 0
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