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dc.contributor.authorTsai, C. J.en_US
dc.contributor.authorDo, H.en_US
dc.contributor.authorChang, C.en_US
dc.contributor.authorChiu, K. A.en_US
dc.contributor.authorHsiang, C. C.en_US
dc.contributor.authorChang, L.en_US
dc.date.accessioned2020-10-05T02:00:32Z-
dc.date.available2020-10-05T02:00:32Z-
dc.date.issued2018-01-01en_US
dc.identifier.isbn978-1-60768-835-8; 978-1-62332-500-8en_US
dc.identifier.issn1938-5862en_US
dc.identifier.urihttp://dx.doi.org/10.1149/08507.0107ecsten_US
dc.identifier.urihttp://hdl.handle.net/11536/155053-
dc.description.abstractMicrowave-assisted chemical bath deposition (CBD) is a newly developed technique for fast growth of single-crystalline ZnO nanorods in a solution containing zinc nitrate at temperature below 100 degrees C. ZnO nanorods have many applications for devices, however, semipolar oriented ZnO nanorods have been rarely reported. In this study, epitaxial growth of well-aligned arrays of inclined semipolar ZnO nanorods on a ZnO seed layer on m-plane sapphire substrates is successfully fabricated by using microwave-assisted chemical bath deposition for 10 min at 90 degrees C. TEM analysis reveals that The ZnO nanorods have an inclined angle about 30 degrees with m-sapphire surface and an average length about 500 nm which gives a growth rate of 3 mu m/h. Micro-photoluminescence measurements show that ZnO nanorods are of a reasonably good quality.en_US
dc.language.isoen_USen_US
dc.titleRapid Synthesis of Semipolar ZnO Nanorod Arrays on M-Sapphire by Microwave-Assisted Chemical Bath Depositionen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1149/08507.0107ecsten_US
dc.identifier.journalWIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 19en_US
dc.citation.volume85en_US
dc.citation.issue7en_US
dc.citation.spage107en_US
dc.citation.epage111en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000542951300013en_US
dc.citation.woscount0en_US
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