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dc.contributor.authorChiu, Kun-Anen_US
dc.contributor.authorFu, Chia-Weien_US
dc.contributor.authorFang, Yu-Siangen_US
dc.contributor.authorThi Hien Doen_US
dc.contributor.authorShih, Fu-Hanen_US
dc.contributor.authorChang, Lien_US
dc.date.accessioned2020-10-05T02:01:06Z-
dc.date.available2020-10-05T02:01:06Z-
dc.date.issued2020-07-25en_US
dc.identifier.issn0257-8972en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.surfcoat.2020.125873en_US
dc.identifier.urihttp://hdl.handle.net/11536/155144-
dc.description.abstractEpitaxial TiZrN films were successfully grown on Si (100) substrates at high temperature by using DC magnetron reactive sputtering with a Ti0.68Zr0.32 alloy target. Annealing of a grown TiZrN/Si specimen was performed by applying microwave plasma with a gas mixture of N-2 and H-2 to improve the film quality. The X-ray rocking curve (XRC) width of (200)(TiZrN) reflection can reach a minimum value of 1.18 degrees. The heteroepitaxial relationship of TiZrN with Si is {001}(TiZrN)//{001}(Si) and < 110 >(TiZrN)//< 110 >(Si). The (200)(TiZrN) XRC width of a 20 nm-thick TiZrN film reduces from 1.99 degrees to 0.85 degrees by microwave plasma annealing. As a result of the improvement of the film quality, the annealed film exhibits a much lower resistivity (28 mu Omega.cm) than that of the as-deposited one (44 mu Omega.cm). The surface morphologies of the TiZrN films are smooth with the surface roughness in the range of 1-2 nm.en_US
dc.language.isoen_USen_US
dc.subjectTiZrNen_US
dc.subjectReactive magnetron sputteringen_US
dc.subjectEpitaxial growthen_US
dc.subjectPlasmaen_US
dc.subjectAnnealingen_US
dc.titleHeteroepitaxial growth and microwave plasma annealing of DC reactive sputtering deposited TiZrN film on Si (100)en_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.surfcoat.2020.125873en_US
dc.identifier.journalSURFACE & COATINGS TECHNOLOGYen_US
dc.citation.volume394en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000542100500049en_US
dc.citation.woscount0en_US
Appears in Collections:Articles