標題: | Reactive sputtering for highly oriented HfN film growth on Si (100) substrate |
作者: | Fang, Yu-Siang Chiu, Kun-An Do, Hien Chang, Li 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | HfN;HfSi2;Epitaxial growth;Reactive magnetron sputtering |
公開日期: | 15-十一月-2019 |
摘要: | Highly oriented cubic (100) HfN films were grown on Si (100) substrates by direct current magnetron reactive sputtering of a metallic Hf target in an Ar/N-2 gas environment. The influence of N-2 flow ratio on the (100) preferred orientation and crystallinity of the HfN films is investigated. X-ray diffraction shows that not only HEN but also orthorhombic HfSi2 forms in the sputtered films. Increasing the N-2 flow ratio is unfavorable for the formation of HfSi2 while the deposition rate of HfN is decreased. X-ray diffraction and cross-sectional scanning transmission electron microscopy (STEM) reveal that epitaxial orthorhombic HfSi2 can form on the Si substrate, and (100) HfN is in epitaxy with the epitaxial HfSi2. As a result, a (100) oriented HfN film can grow on Si. The epitaxial relationships are shown to be HfN (100)[01 (1) over bar] // HfSi2 (020)[001] // Si (100)[01 (1) over bar] and HfN (100)[01 (1) over bar] // HfSi2 (020)[100] // Si (100)[01 (1) over bar]. Atomically resolved STEM images also show the bonding characteristics across the HfN/HfSi2 and HfSi2/Si interfaces. |
URI: | http://dx.doi.org/10.1016/j.surfcoat.2019.07.087 http://hdl.handle.net/11536/153091 |
ISSN: | 0257-8972 |
DOI: | 10.1016/j.surfcoat.2019.07.087 |
期刊: | SURFACE & COATINGS TECHNOLOGY |
Volume: | 377 |
起始頁: | 0 |
結束頁: | 0 |
顯示於類別: | 期刊論文 |