標題: Reactive sputtering for highly oriented HfN film growth on Si (100) substrate
作者: Fang, Yu-Siang
Chiu, Kun-An
Do, Hien
Chang, Li
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: HfN;HfSi2;Epitaxial growth;Reactive magnetron sputtering
公開日期: 15-十一月-2019
摘要: Highly oriented cubic (100) HfN films were grown on Si (100) substrates by direct current magnetron reactive sputtering of a metallic Hf target in an Ar/N-2 gas environment. The influence of N-2 flow ratio on the (100) preferred orientation and crystallinity of the HfN films is investigated. X-ray diffraction shows that not only HEN but also orthorhombic HfSi2 forms in the sputtered films. Increasing the N-2 flow ratio is unfavorable for the formation of HfSi2 while the deposition rate of HfN is decreased. X-ray diffraction and cross-sectional scanning transmission electron microscopy (STEM) reveal that epitaxial orthorhombic HfSi2 can form on the Si substrate, and (100) HfN is in epitaxy with the epitaxial HfSi2. As a result, a (100) oriented HfN film can grow on Si. The epitaxial relationships are shown to be HfN (100)[01 (1) over bar] // HfSi2 (020)[001] // Si (100)[01 (1) over bar] and HfN (100)[01 (1) over bar] // HfSi2 (020)[100] // Si (100)[01 (1) over bar]. Atomically resolved STEM images also show the bonding characteristics across the HfN/HfSi2 and HfSi2/Si interfaces.
URI: http://dx.doi.org/10.1016/j.surfcoat.2019.07.087
http://hdl.handle.net/11536/153091
ISSN: 0257-8972
DOI: 10.1016/j.surfcoat.2019.07.087
期刊: SURFACE & COATINGS TECHNOLOGY
Volume: 377
起始頁: 0
結束頁: 0
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