標題: | Reactive Sputtering Deposition of Epitaxial TiC Film on Si (100) Substrate |
作者: | Fang, Yu-Siang Thi Hien Do Chiu, Kun-An Chen, Wei-Chun Chang, Li 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | TiC;Si substrate;epitaxial growth;reactive magnetron sputtering |
公開日期: | 1-七月-2020 |
摘要: | Epitaxial (100) TiC film deposition on Si (100) substrate by direct current magnetron reactive sputtering of a metallic Ti target with 3%-6% CH4 in Ar gas was investigated. X-ray diffraction and cross-sectional scanning transmission electron microscopy (STEM) reveal that epitaxial cubic TiC can be grown on the Si substrate by domain matching epitaxy in 5/4 ratio with the epitaxial relationship of TiC (100)[0 (1) over bar1] // Si (100)[0 (1) over bar 1]. For sputtering with 3% and 4% CH4, the deposited films are found to consist of both TiC and metallic Ti phases. Increasing the CH4 flow ratio to 5% results in a deposited film completely consisting of TiC without metallic Ti phase. The crystallinity of the deposited TiC is also improved with increasing the CH4 ratio to 5%. X-ray photoelectron spectroscopy shows that the [C]/[Ti] atomic ratio in TiC is nearly close to 1 for growth with 5% CH4 flow ratio and above. The measured electrical resistivities of the deposited films also increase from 41 to 153 mu omega center dot cm with increasing the CH4 ratio from 3% to 6%. With film growth beyond 50 nm thickness, it is shown that some disoriented TiC grains are formed. |
URI: | http://dx.doi.org/10.3390/coatings10070647 http://hdl.handle.net/11536/155095 |
DOI: | 10.3390/coatings10070647 |
期刊: | COATINGS |
Volume: | 10 |
Issue: | 7 |
起始頁: | 0 |
結束頁: | 0 |
顯示於類別: | 期刊論文 |