標題: | Heteroepitaxial growth and microwave plasma annealing of DC reactive sputtering deposited TiZrN film on Si (100) |
作者: | Chiu, Kun-An Fu, Chia-Wei Fang, Yu-Siang Thi Hien Do Shih, Fu-Han Chang, Li 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | TiZrN;Reactive magnetron sputtering;Epitaxial growth;Plasma;Annealing |
公開日期: | 25-七月-2020 |
摘要: | Epitaxial TiZrN films were successfully grown on Si (100) substrates at high temperature by using DC magnetron reactive sputtering with a Ti0.68Zr0.32 alloy target. Annealing of a grown TiZrN/Si specimen was performed by applying microwave plasma with a gas mixture of N-2 and H-2 to improve the film quality. The X-ray rocking curve (XRC) width of (200)(TiZrN) reflection can reach a minimum value of 1.18 degrees. The heteroepitaxial relationship of TiZrN with Si is {001}(TiZrN)//{001}(Si) and < 110 >(TiZrN)//< 110 >(Si). The (200)(TiZrN) XRC width of a 20 nm-thick TiZrN film reduces from 1.99 degrees to 0.85 degrees by microwave plasma annealing. As a result of the improvement of the film quality, the annealed film exhibits a much lower resistivity (28 mu Omega.cm) than that of the as-deposited one (44 mu Omega.cm). The surface morphologies of the TiZrN films are smooth with the surface roughness in the range of 1-2 nm. |
URI: | http://dx.doi.org/10.1016/j.surfcoat.2020.125873 http://hdl.handle.net/11536/155144 |
ISSN: | 0257-8972 |
DOI: | 10.1016/j.surfcoat.2020.125873 |
期刊: | SURFACE & COATINGS TECHNOLOGY |
Volume: | 394 |
起始頁: | 0 |
結束頁: | 0 |
顯示於類別: | 期刊論文 |