標題: Heteroepitaxial growth and microwave plasma annealing of DC reactive sputtering deposited TiZrN film on Si (100)
作者: Chiu, Kun-An
Fu, Chia-Wei
Fang, Yu-Siang
Thi Hien Do
Shih, Fu-Han
Chang, Li
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: TiZrN;Reactive magnetron sputtering;Epitaxial growth;Plasma;Annealing
公開日期: 25-Jul-2020
摘要: Epitaxial TiZrN films were successfully grown on Si (100) substrates at high temperature by using DC magnetron reactive sputtering with a Ti0.68Zr0.32 alloy target. Annealing of a grown TiZrN/Si specimen was performed by applying microwave plasma with a gas mixture of N-2 and H-2 to improve the film quality. The X-ray rocking curve (XRC) width of (200)(TiZrN) reflection can reach a minimum value of 1.18 degrees. The heteroepitaxial relationship of TiZrN with Si is {001}(TiZrN)//{001}(Si) and < 110 >(TiZrN)//< 110 >(Si). The (200)(TiZrN) XRC width of a 20 nm-thick TiZrN film reduces from 1.99 degrees to 0.85 degrees by microwave plasma annealing. As a result of the improvement of the film quality, the annealed film exhibits a much lower resistivity (28 mu Omega.cm) than that of the as-deposited one (44 mu Omega.cm). The surface morphologies of the TiZrN films are smooth with the surface roughness in the range of 1-2 nm.
URI: http://dx.doi.org/10.1016/j.surfcoat.2020.125873
http://hdl.handle.net/11536/155144
ISSN: 0257-8972
DOI: 10.1016/j.surfcoat.2020.125873
期刊: SURFACE & COATINGS TECHNOLOGY
Volume: 394
起始頁: 0
結束頁: 0
Appears in Collections:Articles