Monolithic 3D BEOL FinFET switch arrays using location-controlled-grain technique in voltage regulator with better FOM than 2D regulators

Title:	Monolithic 3D BEOL FinFET switch arrays using location-controlled-grain technique in voltage regulator with better FOM than 2D regulators
Authors:	Hsieh, Ping-Yi Chang, Yi-Jui Chen, Pin-Jun Chen, Chun-Liang Yang, Chih-Chao Huang, Po-Tsang Chen, Yi-Jing Shen, Chih-Ming Liu, Yu-Wei Huang, Chien-Chi Tai, Ming-Chi Lo, Wei-Chung Shen, Chang-Hong Shieh, Jia-Min Chang, Da-Chiang Chen, Kuan-Neng Yeh, Wen-Kuan Hu, Chenming 交大名義發表 National Chiao Tung University
Issue Date:	1-Jan-2019
Abstract:	Monolithic 3D back-end of line (BEOL) FinFET switch arrays are demonstrated in large single crystalline Si islands (2.56 mu m(2)), whose location, size and shape are determined by design. Details of the improved location-controlled-grain (LCG) technique are presented. A voltage regulator implemented with the BEOL switch arrays using external control signals shows better theoretical figure of merit (FOM) of 0.089ns than 2D voltage regulators of 0.43ns.
URI:	http://hdl.handle.net/11536/155245
ISBN:	978-1-7281-4031-5
ISSN:	2380-9248
Journal:	2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
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Appears in Collections:	Conferences Paper