標題: Monolithic 3D SRAM-CIM Macro Fabricated with BEOL Gate-All-Around MOSFETs
作者: Hsueh, Fu-Kuo
Lee, Chun-Ying
Xue, Cheng-Xin
Shen, Chang-Hong
Shieh, Jia-Min
Chen, Bo-Yuan
Chiu, Yen-Cheng
Chen, Hsiu-Chih
Kao, Ming-Hsuan
Huang, Wen-Hsien
Li, Kai-Shin
Wu, Chien-Ting
Lin, Kun-Lin
Chen, Kun-Ming
Huang, Guo-Wei
Chang, Meng-Fan
Hu, Chenming
Yeh, Wen-Kuan
交大名義發表
National Chiao Tung University
公開日期: 1-Jan-2019
摘要: For the first time, below 400 degrees C-fabricated gate-all-around (GAA) transistor fabrication process was demonstrated with monolithic computing-in-memory (CIM) circuit. Key enablers are plasma-assisted atomic layer etching (PA-ALE), plasma immersion ion implantation (PIII) and far-infrared laser activation (FIR-LA). The 3D stackable single-grained Si GAA MOSFETs thus fabricated exhibit record-high I-on/I-off ratio (similar to 10(8)) with low I-off (pFETs<10(-2) nA/mu m). Moreover, the stackability of the GAA MOSFETs and the differential output of dual-mode 10T SRAM readout enable 2x throughput in the CIM circuitry.
URI: http://hdl.handle.net/11536/155257
ISBN: 978-1-7281-4031-5
ISSN: 2380-9248
期刊: 2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
起始頁: 0
結束頁: 0
Appears in Collections:Conferences Paper