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dc.contributor.authorGan, Kai-Jhihen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorRuan, Dun-Baoen_US
dc.contributor.authorChiu, Yu-Chuanen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2020-10-05T02:01:56Z-
dc.date.available2020-10-05T02:01:56Z-
dc.date.issued2020-10-01en_US
dc.identifier.issn0042-207Xen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.vacuum.2020.109630en_US
dc.identifier.urihttp://hdl.handle.net/11536/155349-
dc.description.abstractIn this study, the impact of post-oxide deposition annealing on performance of IGZO-based conductive-bridging random access memory (CBRAM) is reported. It is found that besides the distinct reduction in resistive switching parameters of SET/RESET voltages, their dispersions, and the resistance ratio of high-resistance state to low-resistance state can be improved after N-2 annealing. The annealing effects on enhancing of the resistive switching properties are investigated by x-ray photoelectron spectra. It can be considered that the formation of the filament is better controlled by the increase of oxygen vacancies in the switching layer, which is the main reason for the improvement of resistive switching characteristics.en_US
dc.language.isoen_USen_US
dc.subjectResistive switchingen_US
dc.subjectIndium-gallium-zinc oxide (IGZO)en_US
dc.subjectConductive-bridge random access memory (CBRAM)en_US
dc.subjectAnnealing treatmenten_US
dc.titleAnnealing effects on resistive switching of IGZO-based CBRAM devicesen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.vacuum.2020.109630en_US
dc.identifier.journalVACUUMen_US
dc.citation.volume180en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000566762500002en_US
dc.citation.woscount0en_US
Appears in Collections:Articles