完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChen, Yi-Juen_US
dc.contributor.authorLiao, Hsiu-Hsienen_US
dc.contributor.authorTsui, Bing-Yueen_US
dc.contributor.authorLee, Yao-Jenen_US
dc.contributor.authorWang, Chih-Jenen_US
dc.contributor.authorSung, Po-Jungen_US
dc.date.accessioned2020-10-05T02:01:56Z-
dc.date.available2020-10-05T02:01:56Z-
dc.date.issued2020-10-01en_US
dc.identifier.issn0042-207Xen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.vacuum.2020.109528en_US
dc.identifier.urihttp://hdl.handle.net/11536/155356-
dc.description.abstractGe n(+)/p junctions fabricated by conventional ion implantation (CII) and plasma immersion ion implantation (PIII) are compared in this work. To achieve low junction leakage current, PIII-implanted Ge n(+)/p junctions require higher annealing temperature to eliminate the Shockley-Read-Hall generation current, which may be contributed to the residual hydrogen and hydrogen-related defects. It is demonstrated that with 500 degrees C annealing, well-behaved Ge n(+)/p junction with ultra-shallow junction depth (<50 nm) can be achieved by PIII. With 600 degrees C annealing, best Ge n(+)/p junction performance with current on/off ratio-9 x 10(5) and ideality factor-1.07 is achieved by PIII.en_US
dc.language.isoen_USen_US
dc.subjectGermaniumen_US
dc.subjectIon implantationen_US
dc.subjectJunctionen_US
dc.subjectPlasma immersion ion implantationen_US
dc.titleWell-behaved Ge n(+)/p shallow junction achieved by plasma immersion ion implantationen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.vacuum.2020.109528en_US
dc.identifier.journalVACUUMen_US
dc.citation.volume180en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000567010400002en_US
dc.citation.woscount0en_US
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