標題: Gamma-Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides
作者: Liu, Chien
Tung, Yi-Chun
Wu, Tian-Li
Cheng, Chun-Hu
Tseng, Chih-Yang
Chen, Hsuan-Han
Chen, Hsi-Han
Ma, Jun
Lin, Chien-Liang
Zheng, Zhi-Wei
Chou, Wu-Ching
Hsu, Hsiao-Hsuan
光電系統研究所
電子物理學系
國際半導體學院
Institute of Photonic System
Department of Electrophysics
International College of Semiconductor Technology
關鍵字: endurance;fatigue;ferroelectric capacitors;gamma-ray irradiation;hafnium aluminum oxide
公開日期: 1-Dec-2019
摘要: Herein, the gamma-ray irradiation effect on ferroelectric HfAlO(x)capacitors for biomedical and space applications is investigated. The experimental results focus on the observation of ferroelectric polarization characteristics in support of different defect mechanisms induced by annealing, endurance cycling, and gamma-ray irradiation. It is found that the HfAlO(x)with low Al doping of 6.5% become more vulnerable to radiation exposure, but a remarkable improvement in 9%-Al-doped HfAlO(x)due to less oxygen vacancies is demonstrated. In addition, the results also confirm that the fatigue property of ferroelectric HfAlO(x)capacitor is determined by the electric-stress-induced defect during endurance cycling, not mainly contributed by irradiation damage, which shows the potential for memory applications in rigorous irradiation environment.
URI: http://dx.doi.org/10.1002/pssr.201900414
http://hdl.handle.net/11536/155477
ISSN: 1862-6254
DOI: 10.1002/pssr.201900414
期刊: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume: 13
Issue: 12
起始頁: 0
結束頁: 0
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