標題: Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices
作者: Chang, Lung-Yu
Simanjuntak, Firman Mangasa
Hsu, Chun-Ling
Chandrasekaran, Sridhar
Tseng, Tseung-Yuen
電子工程學系及電子研究所
電機工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Electrical and Computer Engineering
公開日期: 17-Aug-2020
摘要: Oxidation of TiN is a diffusion-limited process due to the high stability of the TiN metallic state at the TiN/TiO2 junction. Hence, the TiN/TiO2/TiN device being the inability to form a suitable interfacial layer results in the exhibition of abrupt current (conductance) rise and fall during the set (potentiation) and reset (depression) processes, respectively. Interfacial engineering by depositing Ti film served as the oxygen gettering material on top of the TiO2 layer induces a spontaneous reaction to form a TiOx interfacial layer (due to the low Gibbs free energy of suboxide formation). Such an interface layer acts as an oxygen reservoir that promotes gradual oxidation and reduction during the set and reset processes. Consequently, an excellent analog behavior having a 2-bit per cell and robust epoch training can be achieved. However, a thick interfacial layer may degrade the switching behavior of the device due to the high internal resistance. This work suggests that interfacial engineering could be considered in designing high-performance analog memristor devices.
URI: http://dx.doi.org/10.1063/5.0014829
http://hdl.handle.net/11536/155478
ISSN: 0003-6951
DOI: 10.1063/5.0014829
期刊: APPLIED PHYSICS LETTERS
Volume: 117
Issue: 7
起始頁: 0
結束頁: 0
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