標題: Balanced Noise Design of Dual-Band 2.4/5-GHz pHEMT LNAs
作者: Meng, Chinchun
Chang, Wei-Ling
Hsiao, Yu-Chih
Li, Meng-Che
Chien, Hsin-Yi
Huang, Guo-Wei
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: dual-band;FET;pHEMT;low-noise amplifier;LNA;noise parameters
公開日期: 1-Jan-2020
摘要: This paper presents dual-band 2.4/5-GHz dual-band pHEMT LNAs based on a balanced noise design approach using 0.15 m pHEMT technology. A dual-band LNA has two input match frequencies without simultaneous noise match at these two frequencies especially when the extrinsic loss caused by the inductor is absent. Noise parameters as a function of frequencies for a dual-band FET LNA based on the balanced noise performance are developed. The fully integrated pHEMT LNA achieves power gain of 18 dB at 2.4 GHz and 12 dB at 5 GHz and noise figure about 3 dB at 2.4 GHz and 5 GHz, respectively, at 12.6 mA and 3 V. The pHEMT LNA with a bondwire inductor at input match demonstrates a distinct balanced noise performance.
URI: http://hdl.handle.net/11536/155518
ISBN: 978-1-7281-1120-9
ISSN: 2164-2958
期刊: 2020 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS 2020)
起始頁: 255
結束頁: 258
Appears in Collections:Conferences Paper