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dc.contributor.authorLin, Yuwen (Dave)en_US
dc.contributor.authorWen, Charles H-Pen_US
dc.contributor.authorChiueh, Hermingen_US
dc.date.accessioned2020-10-05T02:02:22Z-
dc.date.available2020-10-05T02:02:22Z-
dc.date.issued2017-01-01en_US
dc.identifier.isbn978-1-4503-4972-7en_US
dc.identifier.urihttp://dx.doi.org/10.1145/3060403.3060442en_US
dc.identifier.urihttp://hdl.handle.net/11536/155527-
dc.description.abstractFor reducing soft error rate (SER) in system-level failures, this paper proposes a radiation-hardened design by Delay Adjustable D Flip-Flop (DAD-FF), which can be generally applied to sequential circuits such as shift registers. DAD-FF, modified from the Built-In Soft-Error Resilience (BISER) latch, can be easily integrated in the CAD flow and its delay can be adjusted to reject particle strikes with the maximum energy level. As a result, at the device level, DAD-FF eliminates 99.999997%(1) soft errors by heavy ions on a satellite orbiting at a height of 720 km, and shows greater reduction on SER (e.g. 1.3 x 10(10)X in the best case) than the standard DFF (STD-FF) through TCAD and SPICE simulation. Moreover, a real chip was also fabricated in a CMOS 90nm technology and performed the experiment of radiation exposure in UCL, Belgium. The laboratory measurement indicates that at the system level, the radiation-hardened design by DAD-FFs achieves 15.69X and 2.62X improvements on the overall SER, compared with those by STD-FFs and DICEs, respectively.en_US
dc.language.isoen_USen_US
dc.subjectsoft erroren_US
dc.subjectsingle-event transient (SET)en_US
dc.subjectradiation hardeningen_US
dc.subjectmodified cad flowen_US
dc.subjectheavy ionen_US
dc.subjecttcad simulationen_US
dc.subjectradiation exposure measurementen_US
dc.titleRadiation-Hardened Designs for Soft-Error-Rate Reduction by Delay-Adjustable D-Flip-Flopsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1145/3060403.3060442en_US
dc.identifier.journalPROCEEDINGS OF THE GREAT LAKES SYMPOSIUM ON VLSI 2017 (GLSVLSI' 17)en_US
dc.citation.spage197en_US
dc.citation.epage202en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000568262800037en_US
dc.citation.woscount1en_US
Appears in Collections:Conferences Paper