標題: Radiation-Hardened Designs for Soft-Error-Rate Reduction by Delay-Adjustable D-Flip-Flops
作者: Lin, Yuwen (Dave)
Wen, Charles H-P
Chiueh, Herming
電機工程學系
Department of Electrical and Computer Engineering
關鍵字: soft error;single-event transient (SET);radiation hardening;modified cad flow;heavy ion;tcad simulation;radiation exposure measurement
公開日期: 1-一月-2017
摘要: For reducing soft error rate (SER) in system-level failures, this paper proposes a radiation-hardened design by Delay Adjustable D Flip-Flop (DAD-FF), which can be generally applied to sequential circuits such as shift registers. DAD-FF, modified from the Built-In Soft-Error Resilience (BISER) latch, can be easily integrated in the CAD flow and its delay can be adjusted to reject particle strikes with the maximum energy level. As a result, at the device level, DAD-FF eliminates 99.999997%(1) soft errors by heavy ions on a satellite orbiting at a height of 720 km, and shows greater reduction on SER (e.g. 1.3 x 10(10)X in the best case) than the standard DFF (STD-FF) through TCAD and SPICE simulation. Moreover, a real chip was also fabricated in a CMOS 90nm technology and performed the experiment of radiation exposure in UCL, Belgium. The laboratory measurement indicates that at the system level, the radiation-hardened design by DAD-FFs achieves 15.69X and 2.62X improvements on the overall SER, compared with those by STD-FFs and DICEs, respectively.
URI: http://dx.doi.org/10.1145/3060403.3060442
http://hdl.handle.net/11536/155527
ISBN: 978-1-4503-4972-7
DOI: 10.1145/3060403.3060442
期刊: PROCEEDINGS OF THE GREAT LAKES SYMPOSIUM ON VLSI 2017 (GLSVLSI' 17)
起始頁: 197
結束頁: 202
顯示於類別:會議論文