完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, Yuwen (Dave) | en_US |
dc.contributor.author | Wen, Charles H-P | en_US |
dc.contributor.author | Chiueh, Herming | en_US |
dc.date.accessioned | 2020-10-05T02:02:22Z | - |
dc.date.available | 2020-10-05T02:02:22Z | - |
dc.date.issued | 2017-01-01 | en_US |
dc.identifier.isbn | 978-1-4503-4972-7 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1145/3060403.3060442 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/155527 | - |
dc.description.abstract | For reducing soft error rate (SER) in system-level failures, this paper proposes a radiation-hardened design by Delay Adjustable D Flip-Flop (DAD-FF), which can be generally applied to sequential circuits such as shift registers. DAD-FF, modified from the Built-In Soft-Error Resilience (BISER) latch, can be easily integrated in the CAD flow and its delay can be adjusted to reject particle strikes with the maximum energy level. As a result, at the device level, DAD-FF eliminates 99.999997%(1) soft errors by heavy ions on a satellite orbiting at a height of 720 km, and shows greater reduction on SER (e.g. 1.3 x 10(10)X in the best case) than the standard DFF (STD-FF) through TCAD and SPICE simulation. Moreover, a real chip was also fabricated in a CMOS 90nm technology and performed the experiment of radiation exposure in UCL, Belgium. The laboratory measurement indicates that at the system level, the radiation-hardened design by DAD-FFs achieves 15.69X and 2.62X improvements on the overall SER, compared with those by STD-FFs and DICEs, respectively. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | soft error | en_US |
dc.subject | single-event transient (SET) | en_US |
dc.subject | radiation hardening | en_US |
dc.subject | modified cad flow | en_US |
dc.subject | heavy ion | en_US |
dc.subject | tcad simulation | en_US |
dc.subject | radiation exposure measurement | en_US |
dc.title | Radiation-Hardened Designs for Soft-Error-Rate Reduction by Delay-Adjustable D-Flip-Flops | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.doi | 10.1145/3060403.3060442 | en_US |
dc.identifier.journal | PROCEEDINGS OF THE GREAT LAKES SYMPOSIUM ON VLSI 2017 (GLSVLSI' 17) | en_US |
dc.citation.spage | 197 | en_US |
dc.citation.epage | 202 | en_US |
dc.contributor.department | 電機工程學系 | zh_TW |
dc.contributor.department | Department of Electrical and Computer Engineering | en_US |
dc.identifier.wosnumber | WOS:000568262800037 | en_US |
dc.citation.woscount | 1 | en_US |
顯示於類別: | 會議論文 |